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| TLM.321. Vishay Semiconductors Power SMD LED in PLCC-3 Package Description The TLM.321. series is an advanced development in terms of heat dissipation. The leadframe profile of this PLCC-3 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay's high intensity SMD LED in PLCC-2 package. 19210 Features * Utilizing AlInGaP, OMA* technology * Angle of half intensity = 60 * Available in 8 mm tape * Luninous intensity, color and forward voltage categorized per packing unit * Luminous intensity ratio per packing unit IVmax/IVmin 1.6 * ESD class 2 * Suitable for all soldering methods according to CECC * Lead-free device * Organic Mirror Advanced Applications e3 Traffic Signals and Signs Interior and exterior automotive lighting Indicator and backlighting purposes for audio, video, LCD's switches, symbols, illuminated advertising etc. Parts Table Part TLMK3210 Color, Luminous Intensity Red, IV 1000 mcd (typ. 1250 mcd) Dominant Wavelength 611 nm to 622 nm Document Number 84616 Rev. 1.1, 15-Mar-05 www.vishay.com 1 TLM.321. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLMK32.. Parameter Reverse voltage Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ambient mounted on PC board FR4 optional paddesign (see page 7) mounted on PC board FR4 recommended paddesign (see page 6) Tamb 65 C (290 K/W), Tamb 70 C (270 K/W) Test condition Symbol VR IF Ptot Tj Tamb Tstg RthJA RthJA Value 5 70 180 125 - 40 to + 100 - 40 to + 100 290 270 Unit V mA mW C C C K/W K/W Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLMK321. Parameter Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V Test condition IF = 50 mA Part TLMK3210 Symbol IV V/IV d p VF VR 1.85 611 Min 1000 Typ. 1250 3 617 624 18 60 2.2 0.01 3.0 10 622 Max Unit mcd mlm/ mcd nm nm nm deg V A www.vishay.com 2 Document Number 84616 Rev. 1.1, 15-Mar-05 TLM.321. Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 200 PV - Power Dissipation ( mW ) 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 RthJA = 290 K/W 270 K/W 1.2 Red 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 - Wavelength ( nm ) 18567 Tamb - Ambient Temperature ( C ) 16007 Figure 1. Power Dissipation vs. Ambient Temperature I Vrel - Relative Luminous Intensity Figure 4. Relative Intensity vs. Wavelength 90 I F - Forward Current ( mA ) n VF - Change of Forward Voltage (mV) 100 80 70 60 50 40 30 20 10 0 0 18568 250 200 150 100 50 0 -50 -100 -150 -200 -50 -25 0 25 50 75 Tamb - Ambient Temperature ( C ) 100 10 mA 30 mA 50 mA Red 270 K/W RthJA = 290 K/W 25 50 75 100 Tamb - Ambient Temperature ( C ) 125 17034 Figure 2. Forward Current vs. Ambient Temperature Figure 5. Change of Forward Voltage vs. Ambient Temperature 0 I V re l - Relative Luminous Intensity 10 20 30 2.5 I Vrel -Relative Luminous Intensity Red 2.0 1.5 1.0 0.5 0.0 -50 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 17035 -25 0 25 50 75 Tamb - Ambient Temperature ( C ) 100 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Relative Luminous Intensity vs. Amb. Temperature Document Number 84616 Rev. 1.1, 15-Mar-05 www.vishay.com 3 TLM.321. Vishay Semiconductors n l d - Change of Dom. Wavelength (nm) n l d - Change of Dom. Wavelength (nm) 1.5 Red 1.0 0.5 0.0 -0.5 -1.0 -1.5 10 20 30 40 50 60 70 80 90 100 IF - Forward Current ( mA ) 6 Red 4 2 0 -2 -4 -6 -50 17036 -25 0 25 50 75 100 Tamb - Ambient Temperature ( C ) 17038 Figure 7. Change of Dominant Wavelength vs. Ambient Temperature Figure 9. Change of Dominant Wavelength vs. Forward Current 10.00 I Vrel -Relative Luminous Intensity Red 1.00 0.10 0.01 1.00 17037 10.00 IF - Forward Current ( mA ) 100.00 Figure 8. Relative Luminous Intensity vs. Forward Current Forward Voltage Classification Group min 1 2 3 4 5 6 1.85 2.15 2.43 2.55 2.67 2.79 Forward Voltage (V) max 2.25 2.55 2.67 2.79 2.91 3.03 www.vishay.com 4 Document Number 84616 Rev. 1.1, 15-Mar-05 TLM.321. Vishay Semiconductors Color Classification Group Red min 1 2 3 4 5 6 611 614 max 618 622 min 598 600 602 604 606 608 Dominant Wavelength (nm) Soft Orange max 601 603 605 607 609 611 min 581 583 585 587 589 591 Yellow max 584 586 588 590 592 594 Luminous Intensity Classification Group min 1a 1b 2a 2b 1000 1250 1600 2000 Luminous Intensity (mcd) max 1600 2000 2500 3200 Group Name on Label Luminous Intensity Group 1 Halfgroup b Wavelength 2 Forward Voltage 1 One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage Only one single classification groups is not available The given groups are not order codes, customer specific group combinations require marketing agreement No color subgrouping for Super Red Document Number 84616 Rev. 1.1, 15-Mar-05 www.vishay.com 5 TLM.321. Vishay Semiconductors Taping Anode Cathode 3.5 3.1 2.2 2.0 5.75 5.25 3.6 3.4 8.3 7.7 4.0 3.6 Cathode 1.85 1.65 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 18596 Tape Dimensions in mm for PLCC-3 www.vishay.com 6 Document Number 84616 Rev. 1.1, 15-Mar-05 TLM.321. Vishay Semiconductors Recommended Pad Design (Wave-Soldering), RthJA = 270 K/W 16260 Recommended Pad Design (Reflow-Soldering), RthJA = 270 K/W 16261 Document Number 84616 Rev. 1.1, 15-Mar-05 www.vishay.com 7 TLM.321. Vishay Semiconductors Optional Pad Design (Wave-Soldering), RthJA = 290 K/W 16262 Optional Pad Design (Reflow-Soldering), RthJA = 290 K/W 16263 www.vishay.com 8 Document Number 84616 Rev. 1.1, 15-Mar-05 TLM.321. Vishay Semiconductors Package Dimensions in mm 3.5 0.2 + 0.10 1.65- 0.05 0.85 technical drawings according to DIN specifications Mounting Pad Layout 2.6 (2.8) Pin identification 1.2 area covered with solder resist 2.8 + 0.15 C 4 4 1.6 (1.9) Dimensions: IR and Vaporphase (Wave Soldering) www.vishay.com 9 C 2.4 3 + 0.15 Drawing-No. : 6.541-5054.01-4 Issue: 1; 19.02.04 16276 Document Number 84616 Rev. 1.1, 15-Mar-05 0.4 0.9 A 0.5 C TLM.321. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 Document Number 84616 Rev. 1.1, 15-Mar-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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